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Article
Enhanced Charge Carrier Concentration of SiC/CNT with N and P Type Doping Agents
Proceedings of the ASME 2014 International Mechanical Engineering Congress & Exposition, IMECE2014
  • Kyle Edwards
  • Mujibur R. Khan, Georgia Southern University
  • Rafael Quirino, Georgia Southern University
  • Brenda Beckler, Georgia Southern University
  • Saheem Absar, Georgia Southern University
Document Type
Conference Proceeding
Publication Date
11-14-2014
DOI
10.1115/IMECE2014-38123
Abstract
Single-walled Carbon nanotubes (SWCNTs) have been shown to have excellent conductive properties. SWCNTs were dispersed in a SiC nanoparticle matrix to form a homogeneous mixture that is both mechanically durable and conductive. The SWCNT amount has been varied. SiC/SWCNT mixtures were then doped with various N- and P-type agents, and the resulting samples were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). Raman spectra of the samples were also measured for evidence of structural changes. Seebeck coefficients were measured for the doped samples demonstrating the change in thermoelectric properties. Shifts in the G peak (1580.6 cm-1) of the Raman spectra of the samples provides evidence of an increase in charge carrier concentration in the doped samples, correlating well with the Seebeck coefficient results.
Citation Information
Kyle Edwards, Mujibur R. Khan, Rafael Quirino, Brenda Beckler, et al.. "Enhanced Charge Carrier Concentration of SiC/CNT with N and P Type Doping Agents" Montreal, Quebec, CanadaProceedings of the ASME 2014 International Mechanical Engineering Congress & Exposition, IMECE2014 (2014)
Available at: http://works.bepress.com/mujibur-khan/18/