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5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators
Departmental Papers (ESE)
  • Matteo Rinaldi, University of Pennsylvania
  • Chiara Zuniga, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Document Type
Conference Paper
Date of this Version
1-1-2009
Comments
Copyright 2009 IEEE. Reprinted from:
Rinaldi, M.; Zuniga, C.; Piazza, G.; "5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators"; IEEE 22nd International Conference on Micro Electro Mechanical Systems, 2009. (MEMS 2009). 25-29 Jan. 2009 Page(s): 916 - 919
Digital Object Identifier 10.1109/MEMSYS.2009.4805533

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Abstract

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.

Citation Information
Matteo Rinaldi, Chiara Zuniga and Gianluca Piazza. "5-10 GHz AlN Contour-Mode Nanoelectromechanical Resonators" (2009)
Available at: http://works.bepress.com/mrinaldi/8/