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Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications
Departmental Papers (ESE)
  • Matteo Rinaldi, University of Pennsylvania
  • Chiara Zuniga, University of Pennsylvania
  • Chengjie Zuo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.
Document Type
Journal Article
Date of this Version
Copyright 2010 IEEE. Reprinted from:

Rinaldi, M.; Zuniga, C.; Zuo, C.; Piazza, G., "Super-high-frequency two-port AlN contour-mode resonators for RF applications," Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on , vol.57, no.1, pp.38-45, Jan. 2010

Publisher URL:

Digital Object Identifier: 10.1109/TUFFC.2010.1376

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  • Super High Frequency,
  • Ultra-Thin-Film AlN,
  • Nanoscaled Contour-Mode Resonators,
  • MEMS Resonators,
  • MEMS Filters,
  • NEMS
Citation Information
Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo and Gianluca Piazza. "Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications" (2010)
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