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AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz
Departmental Papers (ESE)
  • Matteo Rinaldi, University of Pennsylvania
  • Chiara Zuniga, University of Pennsylvania
  • Chengjie Zuo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Document Type
Conference Paper
Date of this Version
Copyright 2009 IEEE. Reprinted from:

Rinaldi, M.; Zuniga, C.; Chengjie Zuo; Piazza, G., "AlN contour-mode resonators for narrow-band filters above 3 GHz," Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International , vol., no., pp.70-74, 20-24 April 2009

Publisher URL:

Digital Object Identifier: 10.1109/FREQ.2009.5168144

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This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology.

  • Super High Frequency,
  • MEMS Resonator,
  • MEMS Filter,
  • NEMS
Citation Information
Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo and Gianluca Piazza. "AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz" (2009)
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