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Defect-Induced Band Gap Narrowed CeO2 Nanostructures for Visible Light Activities
Industrial & Engineering Chemistry Research (2014)
  • Mohammad Mansoob Khan, Dr
  • S. A. Ansari
  • D. Pradhan
  • D. H. Han
  • J Lee
  • M. H. Cho
Abstract
This work reports an electron beam irradiation (30 kGy and 90 kGy) approach to narrow the band gap of the pristine CeO2 nanostructure (p-CeO2) to enhance their visible light activity through defect engineering. This was confirmed by diffuse reflectance spectroscopy, photoluminescence, Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), Brunauer–Emmett–Teller, electrochemical impedance spectroscopy and linear scan voltammetry. XPS revealed changes in the surface states, composition, Ce4+ to Ce3+ ratio and other defects in the modified CeO2 nanostructures (m-CeO2). The m-CeO2 exhibits excellent photocatalytic activities by degrading 4-nitrophenol and methylene blue in the presence of visible light (λ > 400 nm) compared to the p-CeO2. The optical, photocatalytic, photoelectrochemical studies and proposed mechanism further supports the enhanced visible light photocatalytic activities of the m-CeO2. This study confirmed that defect induced band gap engineered m-CeO2 could be used effectively as photocatalyst and photoelectrodes owing to their enhanced visible light photocatalytic activities.
Keywords
  • CeO2 Nanostructures,
  • Defect-Induced Band Gap Narrowed,
  • Visible light photocatalysis
Publication Date
May 21, 2014
Citation Information
Mohammad Mansoob Khan, S. A. Ansari, D. Pradhan, D. H. Han, et al.. "Defect-Induced Band Gap Narrowed CeO2 Nanostructures for Visible Light Activities" Industrial & Engineering Chemistry Research Vol. 53 (2014)
Available at: http://works.bepress.com/mmansoob_khan/44/