Skip to main content
Article
A Novel Technique to Minimize Standby Leakage Power in Nanoscale CMOS VLSI
Proceedings of the IEEE International Instrumentation and Measurement Technology Conference (2009, Singapore)
  • HeungJun Jeon
  • Yong-Bin Kim
  • Minsu Choi, Missouri University of Science and Technology
Abstract

This paper proposes a novel approach to minimize leakage currents in CMOS circuits during the off-state (or standby mode, sleep mode) by applying the optimal reverse body bias to the substrate (body or bulk) to increase the threshold voltage of transistors. The optimal bias point is determined by comparing the sub-threshold current (ISUB) and band-to-band current (IBTBT) simultaneously. The proposed circuit was simulated in HSPICE using 32nm bulk CMOS technology and evaluated using ISCAS85 benchmark circuits at different operating temperature (ranging from 25°C to 100°C). Analysis of the results shows a maximum of 551 and 1491 times leakage power reduction at 25°C and 100°C on a circuit with 546 gates. The proposed approach demonstrates that the optimal body bias reduces considerable amount of the leakage power in the nanoscale CMOS integrated circuits. In this approach, the temperature and supply voltage variations are compensated by the proposed feedback loop.

Meeting Name
IEEE International Instrumentation and Measurement Technology Conference: I2MTC (2009: May 5-7, Singapore)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
  • Band to Band Tunneling,
  • Band-to-Band Tunneling (BTBT) Leakage Current,
  • SLEEP Mode,
  • Standby Mode,
  • Sub-Threshold Leakage,
  • CMOS Integrated Circuits,
  • Electric Network Analysis,
  • Integrated Circuits,
  • Measurement Theory,
  • MOS Capacitors,
  • Nanostructured Materials,
  • Optimization,
  • Sleep Research,
  • Tunneling (Excavation),
  • Wind Tunnels,
  • Leakage Currents,
  • Off-State,
  • Sub-Threshold Leakage Current
International Standard Book Number (ISBN)
978-1424433520
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2009 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
5-1-2009
Publication Date
01 May 2009
Citation Information
HeungJun Jeon, Yong-Bin Kim and Minsu Choi. "A Novel Technique to Minimize Standby Leakage Power in Nanoscale CMOS VLSI" Proceedings of the IEEE International Instrumentation and Measurement Technology Conference (2009, Singapore) (2009) p. 1380 - 1385 ISSN: 1091-5281
Available at: http://works.bepress.com/minsu-choi/15/