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In Situ Metrology for Glass and Copper CMP
International Conference on Planarization/CMP Technology (ICPT) (2009)
  • Minchul Shin, Georgia Southern University
  • James Vlahakis, Tufts University
  • Vincent P. Manno, Tufts University
  • Chris B. Rogers, Tufts University
  • Edward Paul, Tufts University
  • Mansour Moinpour, Intel Corporation
  • Donald Hooper, Intel Corporation
  • Robert D. White, Tufts University
The objective of this project is to acquire in situ data including wafer-scale friction forces, material removal rate for glass wafers and copper Damascene structures, and small-scale force measurements during chemical mechanical planarization (CMP). The principle experimental platform used is a heavily instrumented Struers RotoPol-31 table top polisher. Measurements are taken for a variety of downforces (0.3-2.5 psi), pad-wafer relative velocities (0-1.0 m/s), and pad grooving (flat, XY grooved, AC grooved, concentric grooved). In most cases we are polishing either BK7 glass wafers using fumed silica polishing slurries, or copper patterned wafers with Fujimi Planerlite 7107 slurry.  For glass wafers , average CoF values ranged from 0.45 to 0.57 and for copper damascene structures, CoF varied from 0.37 to 0.48. Material removal rates are on the order of hundreds of nanometers per minute. Micromachined force sensors have been developed for use in characterizing local, in situ shear forces. The sensors show the polishing forces acting on 50-100 micron diameter structures to be highly variable in time with magnitudes between 0 and 300 micronewtons and time scales on the order of milliseconds.
  • Situ,
  • Metrology,
  • Glass,
  • Copper,
  • CMP
Publication Date
November, 2009
Fukuoka, Japan
Citation Information
Minchul Shin, James Vlahakis, Vincent P. Manno, Chris B. Rogers, et al.. "In Situ Metrology for Glass and Copper CMP" International Conference on Planarization/CMP Technology (ICPT) (2009)
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