Article
Deactivation of Submelt Laser Annealed Arsenic Ultrashallow Junctions in Silicon During Subsequent Thermal Treatment
Journal of Vacuum Science and Technology B
(2010)
Abstract
The use of nonequilibrium annealing approaches can produce very high levels of arsenic electrical activation in Si. However, subsequent thermal treatments between 500 and 800°C easily deactivate the dopant to a level one order of magnitude below the solid solubility. In this work, the authors study the deactivation of laser annealed (LA) ultrashallow arsenic distributions in silicon using Hall effect measurements, extended x-ray absorption fine structure spectroscopy, and secondary ion mass spectrometry. Single crystal Si (100) wafers implanted with As ions at 2keV energy and different doses were activated with a millisecond LA at 1300°C using a scanning diode laser annealing system under nonmelt conditions. The samples were then thermally treated in a furnace at 300–900°C in a N2 atmosphere for 10min. Electrical deactivation has been observed for all the implanted doses but for the lowest one.
Keywords
- Annealing,
- Electric measurements,
- Semiconductors,
- Materials heat treatment,
- Solid-solubility limit,
- Metal oxides,
- Secondary ion mass spectroscopy,
- Hall effect,
- X-ray absorption spectroscopy,
- Chemical elements
Disciplines
Publication Date
January, 2010
DOI
10.1116/1.3242637
Citation Information
Mehmet A. Sahiner, Damiano Giubertoni, Giancarlo Pepponi, Stephen Kelty, et al.. "Deactivation of Submelt Laser Annealed Arsenic Ultrashallow Junctions in Silicon During Subsequent Thermal Treatment" Journal of Vacuum Science and Technology B Vol. 28 Iss. 1 (2010) p. C1B1 - C1B5 Available at: http://works.bepress.com/mehmet_sahiner/25/