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Optimal Electron Doping of a C60 Monolayer on Cu(111) via Interface Reconstruction
Physical Review Letters (2010)
  • Woei Wu Pai, Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
  • H. T. Jeng, Institute of Physics, Academia Sinica, Taipei 115, Taiwan
  • C.-M. Cheng, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
  • C.-H. Lin, Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
  • Xudong Xiao, Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
  • Aidi Zhao, Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
  • Xieqiu Zhang, Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
  • XU Geng, Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
  • X. Q. Shi, Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
  • M. A. Van Hove, Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
  • C. -S. Hsue, Department of Physics, National Tsing Hua University, Hsinchu 300, Taiwan
  • K.-D. Tsuei, Department of Physics, National Tsing Hua University, Hsinchu 300, Taiwan
Abstract
We demonstrate the charge state of C60 on a Cu(111) surface can be made optimal, i.e., forming C60 3- as required for superconductivity in bulk alkali-doped C60, purely through interface reconstruction rather than with foreign dopants. We link the origin of the C60 3- charge state to a reconstructed interface with ordered (4 × 4) 7-atom vacancy 2 holes in the surface. In contrast, C60 adsorbed on unreconstructed Cu(111) receives a much smaller amount of electrons. Our results illustrate a definitive interface effect that affects the electronic properties of molecule-electrode contact.
Disciplines
Publication Date
2010
DOI
10.1103/PhysRevLett.104.036103
Publisher Statement
Publisher version is archived on this website.
Supplement material at: http://iss.lib.hkbu.edu.hk/sw_additional_files/JA-5059-28649_suppl.pdf
The supplementary file provides the following details to complement the main text: 
1) method of estimating the top Cu layer atom density of the reconstructed C60/Cu(111) interface 
2) morphology of a stacked monolayer C60 island 
3) Comparison of best-fit LEED model and the best-energy model 
4) details and methods of ab-initio calculations
Citation Information
Woei Wu Pai, H. T. Jeng, C.-M. Cheng, C.-H. Lin, et al.. "Optimal Electron Doping of a C60 Monolayer on Cu(111) via Interface Reconstruction" Physical Review Letters Vol. 104 Iss. 3 (2010) p. 036103-1 - 036103-4 ISSN: 10797114
Available at: http://works.bepress.com/mavanhove/87/