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Article
Ab initio atomistic prediction of charge separation in bent silicon nanostructures
Journal of Physical Chemistry C (2011)
  • Chun-Sheng Guo, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
  • Michel A. Van Hove, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
Abstract
Crystal lattice bending, in which the lattice compresses and stretches differentially, is a very common phenomenon that has frequently been observed in a variety of long nanostructures. The few studies carried out so far on this topic suggest that bending can significantly modify the properties of such nanostructures, and that they therefore deserve closer study. To explore such effects, we use a new strategy, named “cyclic replacement”, to computationally produce bent silicon nanostructures. For these, ab initio density functional theory calculations predict charge separation, with electrons and holes localized in different regions (varying with the lattice orientation), and a decreasing band gap is found with increasing curvature. We show that the underlying mechanism can be understood in terms of the different behavior of near-gap wavefunctions in the stretched and compressed atomic layers. Bent silicon nanostructures may be useful for solar-cell design where type II homojunctions are formed and charge separation could be facilitated by thermalization.
Disciplines
Publication Date
2011
DOI
10.1021/jp111010v
Citation Information
Chun-Sheng Guo and Michel A. Van Hove. "Ab initio atomistic prediction of charge separation in bent silicon nanostructures" Journal of Physical Chemistry C Vol. 115 Iss. 11 (2011) p. 4516 - 4522 ISSN: 19327455
Available at: http://works.bepress.com/mavanhove/100/