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Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control (2010)
  • Matteo Rinaldi, University of Pennsylvania
  • Chiara Zuniga, University of Pennsylvania
  • Chengjie Zuo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Abstract
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super-high-frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.
Publication Date
January, 2010
Citation Information
Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo and Gianluca Piazza. "Super-High-Frequency Two-Port AlN Contour-Mode Resonators for RF Applications" IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control Vol. 57 Iss. 1 (2010)
Available at: http://works.bepress.com/matteo_rinaldi/7/