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AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz
2009 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (EFTF-IFCS 2009) (2009)
  • Matteo Rinaldi, University of Pennsylvania
  • Chiara Zuniga, University of Pennsylvania
  • Chengjie Zuo, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Abstract
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) Super High Frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) Aluminum Nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt2, in excess of 1.5 %. These devices were employed to synthesize the highest frequency ever reported MEMS filter (3.7 GHz) based on AlN contour-mode resonator (CMR) technology.
Publication Date
April, 2009
Citation Information
Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo and Gianluca Piazza. "AlN Contour-Mode Resonators for Narrow-Band Filters above 3 GHz" 2009 Joint Meeting of the European Frequency and Time Forum and the IEEE International Frequency Control Symposium (EFTF-IFCS 2009) (2009)
Available at: http://works.bepress.com/matteo_rinaldi/6/