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Article
A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into GexS1−x and GexSe1−x Systems: A Flexible Radiation Sensor Development Perspective
IEEE Transactions on Nuclear Science
  • M. Mitkova, Boise State University
Document Type
Article
Publication Date
8-1-2017
DOI
http://dx.doi.org/10.1109/TNS.2017.2684782
Abstract

The impact of varying: 1) metals used to form contact electrodes and 2) chalcogenide glass atomic ratio/chemical composition on the performance of our recently developed flexible radiation detection sensors has been investigated. For electrodes, three group 11 elements (i.e., copper, silver, and gold) were used. For chalcogenide glass film, either GexS1-x or GexSe1-x was used where the atomic ratio of the chalcogen atoms (i.e., sulfide or selenide) was varied from device to device. Selenide systems with Ag electrodes were found to be very promising, since the limit of detection of the sensors showed clear dependence on the Se atomic ratio in the chalcogenide glass film. The other selenide and sulfide systems with different group 11 metal electrodes were not as suitable for the present lateral diffusion-based design due to either their control instability or very slow diffusion caused by γ irradiation from a 60Co source.

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Citation Information
M. Mitkova. "A Comparative Study on TID Influenced Lateral Diffusion of Group 11 Metals into GexS1−x and GexSe1−x Systems: A Flexible Radiation Sensor Development Perspective" IEEE Transactions on Nuclear Science (2017)
Available at: http://works.bepress.com/maria_mitkova/52/