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Dual Beam Actuation of Piezoelectric AlN RF MEMS Switches Integrated with AlN Contour-mode Resonators
2008 Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head 2008) (2008)
  • Nipun Sinha, University of Pennsylvania
  • Rashed Mahamameed, University of Pennsylvania
  • Chengjie Zuo, University of Pennsylvania
  • Marcelo B. Pisani, University of Pennsylvania
  • Carlos R. Perez, University of Pennsylvania
  • Gianluca Piazza, University of Pennsylvania
Abstract

This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5-20 V), facilitates active pull-off to open the switch and fast switching times (1 to 2 µsec). This work also presents the combined response (cascaded S-parameters) of a resonator and a switch that were co-fabricated on the same substrate. The response shows that the resonator can be effectively turned on and off by the switch. A post-CMOS compatible process was used for fabrication of both the switches and the resonators. The single-chip RF solution presented herein constitutes an unprecedented step forward towards the realization of compact, low loss and integrated multi-frequency RF front-ends.

Keywords
  • Aluminum Nitride Based Switches,
  • Radio Frequency Microelectromechanical Systems,
  • Contour-Mode Resonators,
  • Dual beam Actuation
Publication Date
June 2, 2008
Citation Information
Nipun Sinha, Rashed Mahamameed, Chengjie Zuo, Marcelo B. Pisani, et al.. "Dual Beam Actuation of Piezoelectric AlN RF MEMS Switches Integrated with AlN Contour-mode Resonators" 2008 Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head 2008) Vol. 2008 (2008)
Available at: http://works.bepress.com/marcelo_pisani/3/