Raman spectroscopy was utilized to characterize the chemical composition and residual stresses formed in melt infiltrated SiC/SiC CMCs during processing. Stresses in SiC fibers, in SiC chemical vapor (CVI) infiltrated matrix, in SiC melt infiltrated matrix, and in free silicon were measured for two different plates of CMCs. Stresses in the free silicon averaged around 2 GPa in compression, while stresses in the matrix SiC were 1.45 GPa in tension. The SiC CVI phase had stresses ranging between 0.9 GPa and 1.2 GPa in tension and the SiC fibers experienced stresses of .05–0.7 GPa in tension. These results were validated with the proposed model of the system. While the mismatch in the coefficients of thermal expansion between the constituents contributes to the overall residual stress state, the silicon expansion upon solidification was found to be the major contributor to residual stresses within the composite.