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Presentation
Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices
Proceedings of the 2000 IFAC Symposium
  • John D. Busbee
  • Lavern A. Starman, Wright State University - Main Campus
  • Maher S. Amer, Wright State University - Main Campus
  • Jason C. Reber
  • W. D. Cowan
  • John F. Maguire
Document Type
Conference Proceeding
Publication Date
10-1-2000
Abstract
MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.
Comments

Presented at the IFAC Symposium on Artificial Intelligence in Real Time Control, Budapest, Hungary, October 2-4, 2000.

Citation Information
John D. Busbee, Lavern A. Starman, Maher S. Amer, Jason C. Reber, et al.. "Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices" Proceedings of the 2000 IFAC Symposium (2000) p. 123 - 126
Available at: http://works.bepress.com/maher_amer/52/