Utilizing Raman Spectroscopy for Stress Imaging in Mems DevicesProceedings of the 2000 IFAC Symposium
Document TypeConference Proceeding
AbstractMEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.
Citation InformationJohn D. Busbee, Lavern A. Starman, Maher S. Amer, Jason C. Reber, et al.. "Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices" Proceedings of the 2000 IFAC Symposium (2000) p. 123 - 126
Available at: http://works.bepress.com/maher_amer/52/