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Article
The Topotactic Transformation of Ti3SiC2 into a Partially Ordered Cubic Ti  (C0.67Si0.06) Phase by the Diffusion of Si into Molten Cryolite
Journal of the Electrochemical Society
  • Michel W. Barsoum
  • T. El-Raghy
  • L. Farber
  • Maher S. Amer, Wright State University - Main Campus
  • R. Christini
  • A. Adams
Document Type
Article
Publication Date
1-1-1999
Abstract
Immersion of samples in molten cryolite at 960°C resulted in the preferential diffusion of Si atoms out of the basal planes to form a partially ordered, cubic phase with approximate chemistry Ti . The latter forms in domains, wherein the (111) planes are related by mirror planes; i.e.,the loss of Si results in the de‐twinning of the layers. Raman spectroscopy, X‐ray diffraction, optical, scanning and transmission electron microscopy all indicate that the Si exits the structure topotactically, in such a way that the C atoms remain partially in their ordered position in the cubic phase.
DOI
10.1149/1.1392573
Citation Information
Michel W. Barsoum, T. El-Raghy, L. Farber, Maher S. Amer, et al.. "The Topotactic Transformation of Ti3SiC2 into a Partially Ordered Cubic Ti  (C0.67Si0.06) Phase by the Diffusion of Si into Molten Cryolite" Journal of the Electrochemical Society Vol. 146 Iss. 10 (1999) p. 3919 - 3923 ISSN: 00134651
Available at: http://works.bepress.com/maher_amer/50/