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Article
Random Field Driven Spatial Complexity at the Mott Transition in VO2
Physical Review Letters
  • Shuo Liu
  • B. Phillabaum
  • E. W. Carlson
  • M. M. Qazilbash, William & Mary
  • et al., et al.
Document Type
Article
Department/Program
Physics
Pub Date
1-1-2016
Abstract

We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.

DOI
https://doi.org/10.1103/PhysRevLett.116.036401
Publisher Statement

This work is made available for educational and personal use only. Copyright is credited to the authors. Any other uses should be directed to the publisher.

Citation Information
Shuo Liu, B. Phillabaum, E. W. Carlson, M. M. Qazilbash, et al.. "Random Field Driven Spatial Complexity at the Mott Transition in VO2" Physical Review Letters Vol. 116 Iss. 3 (2016)
Available at: http://works.bepress.com/m-qazilbash/13/