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Optimal Design of Integrally Gated CNT Field-Emission Devices Using A Genetic Algorithm
Nanotechnology (2007)
  • P. Y. Chen, National Nano Device Laboratories
  • Chien Hsun Chen, National Nano Device Laboratories
  • J. S. Wu, National Chiao Tung University
  • H. C. Wen, National Chiao Tung University
  • W. P. Wang, National Chiao Tung University
Abstract
A method to optimize the focusing quality of integrally gated CNT field-emission (FE) devices by combining field-emission modeling and a computational intelligence technique, genetic algorithm (GA), is proposed and demonstrated. In this work, the e-beam shape, as a characteristic parameter of electron-optical properties, is calculated by field-emission simulation modeling. Using a design tool that combines GA and physical modeling, a set of structural and electrical parameters for four FE device groups, including double-gate, triple-gate, quadruple-gate and quintuple-gate type, were optimized. The resultant FE devices exhibit satisfactory e-beam focusabilities and the extracted parameters with the best performance for each type of FE device were represented to be fabricated by a VLSI technique. The GA-based automatic design parameter extraction will significantly benefit the design of integrated electron-optical systems for versatile vacuum micro- and nano-electronic applications.
Keywords
  • Genetic Algorithm,
  • Optimization
Publication Date
October 3, 2007
Citation Information
P. Y. Chen, Chien Hsun Chen, J. S. Wu, H. C. Wen, et al.. "Optimal Design of Integrally Gated CNT Field-Emission Devices Using A Genetic Algorithm" Nanotechnology Vol. 18 Iss. 39 (2007)
Available at: http://works.bepress.com/lucemia/3/