Article
Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves
MRS Proceedings
Publication Date
1-1-2003
Disciplines
Abstract
In this paper, we present results on transmission-energy curves through quantum wells with disordered interfaces. We propose a rule to process experimental data to obtain information about the degree of disorder.
DOI
10.1557/PROC-786-E3.1
Citation Information
Louis R. Nemzer and Fredy R. Zypman. "Disorder Characterization of Oxide/Silicon Interfaces from I-V Curves" MRS Proceedings Vol. 786 (2003) ISSN: 1946-4274 Available at: http://works.bepress.com/lnemzer/33/