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Structural, Electrical, Phonon, and Optical Properties of Ti- and V-Doped Two-Dimensional MoS2
Chemical Physics Letters
  • Izaak Williamson, Boise State University
  • Shasha Li, University of Hong Kong
  • Andres Correa Hernandez, Boise State University
  • Matthew Lawson, Boise State University
  • Yue Chen, University of Hong Kong
  • Lan Li, Boise State University
Document Type
Article
Publication Date
4-16-2017
Abstract
The effects of metal-site substitution into two-dimensional transition metal dichalcogenides (2D-TMDs) to further modify its unique properties remain largely unexplored. This work utilizes first-principles density functional theory (DFT) calculations to quickly explore various concentrations of Ti dopants on 2D-MoS2 and investigate their effect on structural, electrical, phonon, and optical properties. These effects decrease with concentration until they converge at 2.083 at.% Ti, where the dopants are effectively isolated. These results were then compared with 2.083 at.% V in MoS2. Our work reviews the effects of metal-site substitution in 2D-MoS2, identifying factors for tailoring the performance of 2D-TMD materials.
Citation Information
Williamson, Izaak; Li, Shasha; Hernandez, Andres Correa; Lawson, Matthew; Chen, Yue; and Li, Lan. (2017). "Structural, Electrical, Phonon, and Optical Properties of Ti- and V-Doped Two-Dimensional MoS2". Chemical Physics Letters, 674, 157-163. https://doi.org/10.1016/j.cplett.2017.02.053