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Optical imaging of carrier dynamics in silicon with subwavelength resolution
Applied Physics Letters
  • Andres H. La Rosa, Portland State University
  • B. I. Yakobson
  • H. D. Hallen
Document Type
Publication Date
  • Near-field microscopy,
  • Silicon -- Defects,
  • Silicon -- Electric properties,
  • Semiconductors,
  • Excess carriers (Solid state physics)

Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.


Article appears in Applied Physics Letters ( and is copyrighted (1997) by the American Institute of Physics, and can be found at: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Citation Information
La Rosa, A. H., Yakobson, B. I., & Hallen, H. D. (1997). Optical imaging of carrier dynamics in silicon with subwavelength resolution. Applied Physics Letters, 70(13), 1656.