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Presentation
Injection of hydrogen and vacancy-type defects during dissolution of aluminum
Chemical and Biological Engineering Conference Presentations and Proceedings
  • Saikat Adhikari, Iowa State University
  • J. Lee, University of Illinois at Urbana-Champaign
  • H. Chen, University of Missouri - Kansas City
  • Y. C. Jean, University of Missouri - Kansas City
  • Kurt R. Hebert, Iowa State University
Document Type
Conference Proceeding
Conference
Electrochemical Society Proceedings
Publication Date
10-1-2005
DOI
10.1149/1.2215496
Geolocation
(34.0522342, -118.2436849)
Abstract
Formation of interfacial nanoscale voids in Al during room-temperature caustic corrosion was characterized by positron annihilation spectroscopy (PAS) and compared with measurements of deuterium absorption using secondary ion mass spectrometry (SIMS). The hypothesis was investigated that voids are created from vacancy-hydrogen (Vac-H) defects introduced during corrosion. Evidence for both mobile and immobile forms of absorbed hydrogen was obtained, the latter present within distances of 50 nm from the metal-oxide interface, where voids were also found. During corrosion, the immobile hydrogen was found only during discrete 1-2 min intervals of time separated by periods of 1-2 min when it was not present. Model calculations suggested that this transient behavior is consistent with repeated nucleation and dissolution of clusters of Vac-H defects. Only some aspects of the time-dependence of the void concentration from PAS corresponded with that of absorbed hydrogen; the former is believed to be influenced by metallic impurities.
Comments

The archival version of this work was published in Adhikari, S., Lee, J., Chen, H., Jean, Y.C., Hebert, K.R."Injection of hydrogen and vacancy-type defects during dissolution of aluminum" (2005) ECS Transactions,1 (4), pp. 127-138. doi: 10.1149/1.2215496

Rights
© The Electrochemical Society, Inc. 2011. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).
Copyright Owner
The Electrochemical Society
Language
en
Citation Information
Saikat Adhikari, J. Lee, H. Chen, Y. C. Jean, et al.. "Injection of hydrogen and vacancy-type defects during dissolution of aluminum" Los Angeles, CA(2005)
Available at: http://works.bepress.com/kurtr_hebert/49/