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Presentation
Effect of Impurities on Interfacial Void Formation in Aluminum
Chemical and Biological Engineering Conference Presentations and Proceedings
  • Renchun Huang, Iowa State University
  • Kurt R. Hebert, Iowa State Univ,
  • Thomas Gessmann, Washington State University
  • Kelvin G. Lynn, Washington State University
Document Type
Conference Proceeding
Conference
Electrochemical Society Proceedings
Publication Date
1-1-2002
Geolocation
(40.7607793, -111.89104739999999)
Abstract

The effect of impurities on formation of interfacial metallic voids, during uniform dissolution of aluminum in 1 M NaOH, was investigated. These voids are thought to act as initiation sites for pitting. Foils of three different bulk purities were used: 99.98% (3N), 99.997% (4N), and 99.9995% (5N). Positron Annihilation Spectroscopy (PAS) and Atomic Force Microscopy (AFM) revealed that nm-scale voids were formed by dissolution in each foil. The void volume fraction increased to a maximum during dissolution, at a time which increased with foil purity. The concurrent accumulation of near-surface Cu and Fe impurities during caustic etching was characterized using Rutherford backscattering spectrometry (RBS). For the three foils, a correlation of void volume fraction with Cu surface concentration was suggested. Processes involving Cu impurities may then at least partly control the formation of voids.

Comments

The archival version of this work was published in R. Huang, K. R. Hebert, T. Gessmann, and K. G. Lynn “Effect of Impurities on Interfacial Void Formation on Aluminum During Dissolution Processes,” in Critical Factors in Localized Corrosion IV, P. Schmuki, S. Virtanen and G. S. Frankel, Editors, PV 2002-24, 359-367, The Electrochemical Society Proceedings Volume Series, Pennington, NJ (2003).

Rights
© The Electrochemical Society, Inc. 2002. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).
Copyright Owner
The Electrochemical Society
Language
en
Citation Information
Renchun Huang, Kurt R. Hebert, Thomas Gessmann and Kelvin G. Lynn. "Effect of Impurities on Interfacial Void Formation in Aluminum" Salt Lake City, Utah(2002)
Available at: http://works.bepress.com/kurtr_hebert/47/