An ideal memristor model is modified to include the effects of radiation interactions with the device. Modeling is done in Cadence Virtuoso design suite using Verilog-A. Simulations include the effect of radiation events that could change the state of device or can ionize the device to create e−h+ pairs or change the off-state resistance of the device. Combination of these events occurring simultaneously is also studied. Simulation results are compared with the experimental results published in existing research papers. Finally, transient simulation of a three-input, two-output spiking electronic neural network with memristive synapses is performed. Varying amounts of energy deposited by radiation are modeled, and it is observed that radiation exposure dramatically alters the synaptic weight evolution.