Article
Stain Etching with Fe(III), V(V), and Ce(IV) to Form Microporous Silicon
Electrochemical and Solid State Letters
Document Type
Article
Publication Date
1-1-2009
Disciplines
Abstract
Stain etchants made from (HF+V(2)O(5)) or (HF+FeCl(3)center dot 6H(2)O+HCl or H(2)SO(4)) exhibited virtually no initiation time before the formation of porous silicon. Etching with Fe(III) solutions for extended periods resulted in a unique dual layer structure that can reach a thickness >10 mu m and exhibited not only red-orange but also green photoluminescence (PL). Etching with (CeF(4)+H(2)SO(4)) produced extremely uniform films. Visible PL was observed immediately after etching except for those films produced with (CeF(4)+H(2)SO(4)), which required several days of air exposure before bright and robust PL developed.
Publisher
Electrochemical Society Inc
DOI
10.1149/1.3074333
Citation Information
M E Dudley and Kurt Kolasinski. "Stain Etching with Fe(III), V(V), and Ce(IV) to Form Microporous Silicon" Electrochemical and Solid State Letters Vol. 12 Iss. 4 (2009) ISSN: 1099-0062 Available at: http://works.bepress.com/kurt_kolasinski/1/
© The Electrochemical Society, Inc. 2009. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published at http://esl.ecsdl.org/content/12/4/D22.abstract.