Article
Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications
Materials Research Society Symposium Proceedings
Document Type
Conference Proceeding
Publication Date
1-1-2007
Disciplines
Abstract
Two-terminal electronic devices consisting of stacks of chalcogenide layers containing GeTe, Ge40Se60, SnTe, or SnSe have shown promise for application as electronic phase-change memories (Campbell, K.A. and Anderson, C.M., Microelectronics Journal 38, 52–59 (2007)). Here, we report the synthesis of (Ge40Se60)100−zMz alloys where M=Sn, In, Sb, and Zn, and the corresponding bulk material Raman spectra and differential scanning calorimetry data in order to explore material compositions that might be useful for producing a multi-state phase-change memory device.
Citation Information
Kristy A. Campbell, Morgan G. Davis and Jeffrey M. Peloquin. "Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications" Materials Research Society Symposium Proceedings (2007) Available at: http://works.bepress.com/kris_campbell/12/