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Selected Works of Kris Campbell

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Professor, Department of Electrical & Computer Engineering

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Dr. Kris Campbell is a professor in the Department of Electrical and Computer Engineering at Boise State University.

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About Kris Campbell

Dr. Kris Campbell is a professor in the Department of Electrical and Computer Engineering at Boise State University.

Positions

July 2005 - Present	Professor, Boise State University ‐ Department of Electrical and Computer Engineering
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January 2004 - June 2005	Adjunct Faculty Member, Boise State University ‐ Department of Chemistry and Biochemistry
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Disciplines

Electrical and Computer Engineering and Physical Chemistry

Research Interests

Chalcogenide-Based Non-Volatile Memory and Memristive Devices, Resistance Variable Devices, Optically gated Transistors, Random Number Generator Circuits, and Sensor for Chemical Detection

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Courses

Memristor Device Theory and Fabrication
Semiconductor Devices
Microelectronics
Circuits
Advanced Semiconductor Device Design and Simulation
Introduction to Microfabrication
Advances in Amorphous Semiconductors
Organic Electronics

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	PhD, University of California, Davis ‐ Chemistry
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Links

Department of Electrical & Computer Engineering

Contact Information

E-mail: kriscampbell@boisestate.edu

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Articles
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Presentations

Articles (15)

Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor (Kris Campbell) Micromachines (2024)

The optically gated transistor (OGT) has been previously demonstrated as a viable selector device for memristor devices, and may enable optical addressing within cross-point arrays. The OGT current–voltage response is similar to a MOSFET device, ...

Demonstration of Three True Random Number Generator Circuits Using Memristor Created Entropy and Commercial Off-the-Shelf Components (Scott Stoller and Kristy A. Campbell) Entropy (2021)

In this work, we build and test three memristor-based true random number generator (TRNG) circuits: two previously presented in the literature and one which is our own design. The functionality of each circuit is assessed ...

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K (Kolton Drake, Tonglin Lu, Md. Kamrul H. Majumdar, et al.) Micromachines (2019)

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate ...

An Optically Gated Transistor Composed of Amorphous M + Ge2Se3 (M = Cu or Sn) for Accessing and Continuously Programming a Memristor (Kristy A. Campbell, Randall A. Bassine, Md. Faisal Kabir, et al.) ACS Applied Electronic Materials (2019)

We demonstrate that a device composed of sputtered amorphous chalcogenide Ge2Se3/M + Ge2Se3 (M = Sn or Cu) alternating layers functions as an optically gated transistor (OGT) and can be used as an access transistor ...

Self-Directed Channel Memristor for High Temperature Operation (Kristy A. Campbell) Microelectronics Journal (2017)

Ion-conducting memristors comprised of the layered chalcogenide materials Ge2Se3/SnSe/Ag are described. The memristor, termed a self-directed channel (SDC) device, can be classified as a generic memristor and can tolerate continuous high temperature operation (at least ...

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses (Kris A. Campbell, Kolton T. Drake and Elisa H. Barney Smith) Frontiers in Bioengineering and Biotechnology: Nanobiotechnology (2016)

Ion-conducting memristors comprised of the layered materials Ge2Se3/SnSe/Ag are promising candidates for neuromorphic computing applications. Here, the spike-timing dependent plasticity (STDP) application is demonstrated for the first time with a single memristor type operating as ...

Real-Time Detection of False Data Injection in Smart Grid Networks: An Adaptive CUSUM Method and Analysis (Yi Huang, Jin Tang, Yu Cheng, et al.) IEEE Systems Journal (2016)

A smart grid is delay sensitive and requires the techniques that can identify and react on the abnormal changes (i.e., system fault, attacker, shortcut, etc.) in a timely manner. In this paper, we propose a ...

Adaptive Quickest Estimation Algorithm for Smart Grid Network Topology Error (Yi Huang, Mohammad Esmalifalak, Yu Cheng, et al.) IEEE Systems Journal (2013)

Smart grid technologies have significantly enhanced robustness and efficiency of the traditional power grid networks by exploiting technical advances in sensing, measurement, and two-way communications between the suppliers and customers. The state estimation plays a ...

Reconfigurable Threshold Logic Gates Using Memristive Devices (Adrian Rothenbuhler, Thanh Tran, Elisa H. Barney Smith, et al.) Journal of Low Power Electronics and Applications (2013)

We present our design exploration of reconfigurable Threshold Logic Gates (TLG) implemented using silver–chalcogenide memristive devices combined with CMOS circuits. Results from simulations and physical circuits are shown. A variety of linearly separable logic functions ...

Self-Trapping of Single and Paired Electrons in Ge2Se3 (A. H. Edwards, Kristy A. Campbell and Andrew C. Pineda) Journal of Physics: Condensed Matter (2012)

We report the theoretical prediction of single and paired electron self-trapping in Ge2Se3. In finite atomic cluster, density functional calculations, we show that excess single electrons in Ge2Se3 are strongly localized around single germanium dimers. ...

Investigation of Inter-Diffusion in Bilayer GeTe/SnSe Phase Change Memory Films (Archana Devasia, David MacMahon, Simone Raoux, et al.) Thin Solid Films (2012)

A metal-chalcogenide layer, SnSe, is inserted between the memory layer GeTe and the top electrode to form a phase change memory cell. The GeTe layer exhibits ovonic threshold switching at a threshold field of ~ ...

First-Principles Study of 75As NQR in Arsenic-Chalcogenide Compounds (Arthur H. Edwards, P. C. Taylor, Kristy A. Campbell, et al.) Journal of Physics: Condensed Matter (2011)

We present a theoretical study of the nuclear quadrupole interaction, νQ, of 75As in crystalline and amorphous materials containing sulfur and selenium, and compare them with experiment. We studied a combination of hydrogen-terminated molecular clusters ...

Influence of Sn Migration on Phase Transition in GeTe and Ge2Se3 Thin Films (Archana Devasia, Santosh Kurinec, Kristy A. Campbell, et al.) Applied Physics Letters (2010)

Phase transitions in GeTe/SnSe and Ge2Se3/SnTe are investigated using time resolved x-ray diffraction. GeTe exhibits a structural transition from rhombohedral to the cubic phase at 300 °C, which is ∼ 100 °C lower than that ...

Analyzing Residual Stress in Bilayer Chalcogenide Ge2Se3/SnTe Films (Archana Devasia, Feiming Bai, Morgan G. Davis, et al.) Thin Solid Films (2009)

Chalcogenide thin film stacks of polycrystalline SnTe and amorphous Ge2Se3 are analyzed for residual stress using X-ray diffraction. The as-deposited film stacks are annealed at different temperatures and the thermal dependence of stress is investigated. ...

An Investigation of Amorphous Ge2Se3 Structure for Phase Change Memory Devices Using Fluctuation Electron Microscopy (K. Jarvis, R. W. Carpenter, M. Davis, et al.) Journal of Applied Physics (2009)

Medium range order in amorphous thin films of Ge2Se3, a phase change memory material, was examined using electron nanodiffraction fluctuation electron microscopy. Variance measurements showed that medium range order existed at 0.36 and 0.58 Å−1. ...

Student Mentored Works (14)

Plasma Enhanced Chemical Vapor Deposition of Boron Nitride Thin Films (Maya Hernandez, Rene Rodriguez, Kali Castle, et al.) Idaho Conference on Undergraduate Research (2021)

Hexagonal boron nitride is a beneficial coating material as it has been found to have properties exhibiting anti-corrosion and thermal and chemical stability. Specifically, boron nitrides anti-corrosive properties would be a beneficial coating material on ...

Plasma Enhanced Chemical Vapor Deposition of Boron Nitride Thin Films (Maya Hernandez, Rene Rodriguez, Kali Castle, et al.) Idaho Conference on Undergraduate Research (2021)

Hexagonal boron nitride is a beneficial coating material as it has been found to have properties exhibiting anti-corrosion and thermal and chemical stability. Specifically, boron nitrides anti-corrosive properties would be a beneficial coating material on ...

Creating an Inclusive Learning Environment in Electrical Engineering Circuits Undergraduate Laboratories: A LabView Interface for Laboratory Test Equipment for the Visually Impaired (Randall A. Bassine and Kris Campbell) 2020 Undergraduate Research Showcase (2020)

We have developed a test and measurement module that interfaces LabView [1] software with the common undergraduate laboratory test equipment including a digital oscilloscope, waveform generator, and multimeter. The interface converts the measurement data from ...

Creating an Inclusive Learning Environment in Electrical Engineering Circuits Undergraduate Laboratories: A LabView Interface for Laboratory Test Equipment for the Visually Impaired (Randall A. Bassine and Kris Campbell) 2020 Undergraduate Research Showcase (2020)

We have developed a test and measurement module that interfaces LabView [1] software with the common undergraduate laboratory test equipment including a digital oscilloscope, waveform generator, and multimeter. The interface converts the measurement data from ...

A Study of the Electrical Conduction Mechanisms of Bilayer Phase-Change Memory Devices Over the Temperature Range of 5 K to 340 K (Md Kamrul Hassan Majumdar and Kris Campbell) 2019 Graduate Student Showcase (2019)

In this work, three phase change memory (PCM) devices using layered chalcogenide materials, GeTe/SnTe, Ge2Se3/SnTe, Ge2Se3/SnSe, and one single material layer device comprised of Ge2Sb2Te5 (GST) were fabricated and electrically characterized. The GeTe and Ge2Se3 ...

Ge2Se3/Ge2Se3-M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C)-Based Optically-Gated Transistor: M Influence on Optical and Electrical Properties (Md Faisal Kabir and Kris Campbell) 2019 Graduate Student Showcase (2019)

Electronic devices made with alternating layers of undoped and doped chalcogenide materials, Ge2Se3/Ge2Se3-M (M = Sn, Al, Ti, W, Cr, Pb, Cu, C) exhibit transistor-like current-voltage (I-V) curves when illuminated. These devices referred to as ...

Optically Gated Transistor Amplifier (Randall Bassine, Jeremy Astle and Kris Campbell) Idaho Conference on Undergraduate Research (2018)

An optically-gated transistor has many uses in areas such as sensors and fiber optics. In this work, we created an optically-gated transistor using Ge2Se3 doped with Al and used this transistor to build and test ...

Current-Voltage Response of Cosputtered Ge40Se60 Films (Randall Bassine and Kris Campbell) Idaho Conference on Undergraduate Research (2017)

We have been investigating thin film materials for use in fabricating a device which could perform as a ‘selector’ switch and eventually be fabricated in series with a memristor device in a cross-point array. A ...

Memristor Device Fabrication (Jeremy Astle and Kris Campbell) Idaho Conference on Undergraduate Research (2017)

In the Idaho Microfabrication Laboratory at Boise State University, Dr. Kris Campbell’s research involves the development of new memristor device types. Fabrication of these different device types involves the development of new materials for the ...

Using LT-Spice Circuit Modeling to Investigate the Effects of Changing the Metal-Selenide Layer in the Self-Directed Channel Memristor (Denver Lloyd and Kris Campbell) Idaho Conference on Undergraduate Research (2017)

LT-spice simulations were performed for several self-directed channel (SDC) memristor device types that had been fabricated and electrically characterized in our research lab. The SDC devices differed by the type of metal (M) present in ...

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