Extending the Band Model of Disordered SiO2 Through Cathodoluminescence StudiesFour Corner Sections Meeting American Physical Society New Mexico Institute of Mining and Technology Socorro, NM October 26-27, 2012
AbstractOptical coatings of disordered thin film SiO2/SiOx dielectric samples on reflective metal substrates exhibited electron-induced luminescence (cathodoluminescence) under electron beam irradiation in an ultrahigh vacuum chamber at the USU facilities,. These experiments provided measurements of the absolute radiance and emission spectra as functions of incident electron energy, flux and power over a range of sample temperatures (300 K to 40 K). Early results from these experiments have led to a preliminary model of the band structure of highly disordered trapped states within the band gap of SiO2. We now extend this model to further describe the excitation of electrons from the valence band to the conduction band and subsequent relaxion into trapped states. The model for cathodoluminescence is used to describe the experimental observations, providing a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy, and sample thickness and temperature. *This work was supported by funds from NASA Goddard Space Flight Center and a NASA Space Technology Research Fellowship.
Citation InformationAmberly Evans, Gregory Wilson, JR Dennison and Justin Dekany. "Extending the Band Model of Disordered SiO2 Through Cathodoluminescence Studies" Four Corner Sections Meeting American Physical Society New Mexico Institute of Mining and Technology Socorro, NM October 26-27, 2012 (2012)
Available at: http://works.bepress.com/justin_dekany/10/