A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-tocrystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
- Crystalline Materials,
- Deposition,
- Extended X Ray Absorption Fine Structure Spectroscopy,
- Film Growth,
- High Resolution Transmission Electron Microscopy,
- Indium,
- Molecular Dynamics,
- Pulsed Laser Deposition,
- X Ray Absorption,
- X Ray Diffraction,
- Ab Initio Molecular Dynamics,
- Amorphous Indium-Oxide,
- Amorphous Oxides,
- Extended X-Ray Absorption Fine Structures,
- Grazing Angle X-Ray Diffraction,
- Structure and Properties,
- Structure Property Relationships,
- Transport Measurements,
- Amorphous Films
Available at: http://works.bepress.com/julia-medvedeva/43/