Article
Electron-Irradiation-Induced Deep Level in n-Type GaN
Applied Physics Letters
Document Type
Article
Publication Date
1-26-1998
Disciplines
Abstract
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics.
DOI
10.1063/1.120783
Citation Information
Z-Q. Fang, Joseph W. Hemsky, David C. Look and M. P. Mack. "Electron-Irradiation-Induced Deep Level in n-Type GaN" Applied Physics Letters Vol. 72 Iss. 4 (1998) p. 448 - 449 ISSN: 0003-6951 Available at: http://works.bepress.com/joseph_hemsky/15/
Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 72.4, and may be found at http://dx.doi.org/10.1063/1.120783.