Other
Identification of the 0.15 eV Donor Defect in Bulk GaAs
MRS Proceedings
Document Type
Conference Proceeding
Publication Date
1-1-1994
Find this in a Library
Catalog Record
Disciplines
Abstract
The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.
DOI
10.1557/PROC-322-431
Citation Information
Z-Q. Fang, Joseph Hemsky and David C. Look. "Identification of the 0.15 eV Donor Defect in Bulk GaAs" MRS Proceedings Vol. 325 (1994) p. 431 ISSN: 0272-9172 Available at: http://works.bepress.com/joseph_hemsky/11/
Presented at the 1993 MRS Fall Meeting, Boston, MA.
Copyright © Materials Research Society 1994.