A systematic study of the ion beam heating effect was performed in a temperature range of -170 to 900 °C using a 10 MeV Au3+ ion beam and a Yttria stabilized Zirconia (YSZ) sample at a flux of 5.5 x 1012 cm-2 s-1. Different geometric configurations of beam, sample, thermocouple positioning, and sample holder were compared to understand the heat/charge transport mechanisms responsible for the observed temperature increase. The beam heating exhibited a strong dependence on the background (initial) sample temperature with the largest temperature increases occurring at cryogenic temperatures and decreasing with increasing temperature. Comparison with numerical calculations suggests that the observed heating effect is, in reality, a predominantly electronic effect and the true temperature rise is small. A simple model was developed to explain this electronic effect in terms of an electrostatic potential that forms during ion irradiation. Such an artificial beam heating effect is potentially problematic in thermostated ion irradiation and ion beam analysis apparatus, as the operation of temperature feedback systems can be significantly distorted by this effect.