Article
Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots
Advanced Materials
Document Type
Article
Publication Date
9-6-2013
Disciplines
Abstract
One-dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field-effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD-BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.
Publisher's Statement
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Publisher's version of record: https://dx.doi.org/10.1002/adma.201301339
Citation Information
Chee Huei Lee, Shengyong Qin, Madhusudan A. Savaikar, Jiesheng Wang, et al.. "Room temperature tunneling behaviors of boron nitride nanotubes functionalized with gold quantum dots" Advanced Materials Vol. 25 Iss. 33 (2013) p. 4544 - 4548 Available at: http://works.bepress.com/john-jaszczak/54/