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Optimization of Protocrystalline Silicon p-Type Layers for Amorphous Silicon n-i-p Solar Cells
Journal of Non-Crystalline Solids (2004)
  • G. M. Ferreira, The Pennsylvania State University
  • Chi Chen, The Pennsylvania State University
  • R. J. Koval, The Pennsylvania State University
  • Joshua M. Pearce, The Pennsylvania State University
  • C. R. Wronski, The Pennsylvania State University
  • R. W. Collins, The Pennsylvania State University
Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams for p-type hydrogenated silicon (Si:H) films prepared at low temperature (200 °C) by rf plasma-enhanced chemical vapor deposition using gas mixtures of SiH4, H2, and BF3. These diagrams depict the regimes of accumulated thickness and H2-dilution ratio R=[H2]/[SiH4] within which p-type amorphous Si:H [a-Si:H], mixed-phase Si:H [(a + μc)-Si:H], and single-phase microcrystalline Si:H [μc-Si:H] films are obtained in depositions on R=0 a-Si:H surfaces. The performance of n–i–p solar cells incorporating p-layers deposited under the same conditions as those used in the phase diagram development has been correlated with the deduced p-layer characteristics. This correlation demonstrates that Voc is maximized when the highest possible R value is used for the p-layer while ensuring single-phase amorphous film growth throughout its thickness.
  • A205,
  • E280,
  • P115
Publication Date
May 10, 2004
Publisher Statement
© 2004 Elsevier B.V. Preprint uploaded here in compliance with publisher policies. Publisher's version of record:
Citation Information
G. M. Ferreira, Chi Chen, R. J. Koval, Joshua M. Pearce, et al.. "Optimization of Protocrystalline Silicon p-Type Layers for Amorphous Silicon n-i-p Solar Cells" Journal of Non-Crystalline Solids (2004)
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