Dependence of Open-Circuit Voltage in Hydrogenated Protocrystalline Silicon Solar Cells on Carrier Recombination in p/i Interface and Bulk RegionsApplied Physics Letters (2000)
Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current–voltage (JD–V) and short-circuit current–open-circuit voltage (Jsc–Voc)characteristics of hydrogenated amorphous-silicon (a-Si:H) p–i–n and n–i–psolar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc–Voccharacteristics at low illumination intensities.
Publication DateNovember 6, 2000
Citation InformationJoshua M. Pearce, Randy J. Koval, Andre S. Ferlauto, Robert W. Collins, et al.. "Dependence of Open-Circuit Voltage in Hydrogenated Protocrystalline Silicon Solar Cells on Carrier Recombination in p/i Interface and Bulk Regions" Applied Physics Letters Vol. 77 Iss. 19 (2000)
Available at: http://works.bepress.com/jmpearce/67/