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Dependence of Open-Circuit Voltage in Hydrogenated Protocrystalline Silicon Solar Cells on Carrier Recombination in p/i Interface and Bulk Regions
Applied Physics Letters (2000)
  • Joshua M. Pearce, Pennsylvania State University
  • Randy J. Koval, Pennsylvania State University
  • Andre S. Ferlauto, Pennsylvania State University
  • Robert W. Collins, Pennsylvania State University
  • Christopher R. Wronski, Pennsylvania State University
  • Jeffrey Yang
  • Subbhendu Guha
Abstract
Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current–voltage (JD–V) and short-circuit current–open-circuit voltage (Jsc–Voc)characteristics of hydrogenated amorphous-silicon (a-Si:H) p–i–n and n–i–psolar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun Voc for a given bulk material can be validly extrapolated from bulk dominated Jsc–Voccharacteristics at low illumination intensities.
Disciplines
Publication Date
November 6, 2000
Publisher Statement
© 2000 American Institute of Physics. Publisher's PDF uploaded here in compliance with publisher policies. Publisher's version of record: http://dx.doi.org/10.1063/1.1323550
Citation Information
Joshua M. Pearce, Randy J. Koval, Andre S. Ferlauto, Robert W. Collins, et al.. "Dependence of Open-Circuit Voltage in Hydrogenated Protocrystalline Silicon Solar Cells on Carrier Recombination in p/i Interface and Bulk Regions" Applied Physics Letters Vol. 77 Iss. 19 (2000)
Available at: http://works.bepress.com/jmpearce/67/