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Article
Light-Induced Defect States in Hydrogenated Amorphous Silicon Centered Around 1.0 and 1.2 eV from the Conduction Band Edge
Applied Physics Letters (2003)
  • Joshua M. Pearce, Michigan Technological University
  • J. Deng
  • R. W. Collins
  • C. R. Wronski
Abstract
To take into account the presence of multiple light-induced defect states in hydrogenated amorphous silicon(a-Si:H) the evolution of the entire spectra of photoconductive subgap absorption, α(hν), has been analyzed. Using this approach two distinctly different light-induced defect states centered around 1.0 and 1.2 eV from the conduction band edge are clearly identified. Results are presented on their evolution and respective effects on carrier recombination that clearly point to the importance of these states in evaluating the stability of different a-Si:Hsolar cell materials, as well as elucidating the origin of the Staebler–Wronski effect.
Disciplines
Publication Date
November 3, 2003
Publisher Statement
© 2003 American Institute of Physics. Publisher's PDF uploaded here in compliance with publisher policies. Publisher's version of record: http://dx.doi.org/10.1063/1.1624637
Citation Information
Joshua M. Pearce, J. Deng, R. W. Collins and C. R. Wronski. "Light-Induced Defect States in Hydrogenated Amorphous Silicon Centered Around 1.0 and 1.2 eV from the Conduction Band Edge" Applied Physics Letters Vol. 83 Iss. 18 (2003)
Available at: http://works.bepress.com/jmpearce/66/