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Double Amorphous Silicon-Carbide p-Layer Structures Producing Highly Stabilized pin-Type Protocrystalline Silicon Multilayer Solar Cells
Applied Physics Letters (2005)
  • Joshua M. Pearce, Michigan Technological University
  • Seung Yeop Myong
  • Koeing Su Lim
Abstract
We have applied double p-type amorphous silicon-carbide (p-a-SiC:H) layer structures to pin-type protocrystalline silicon(pc-Si:H)multilayersolar cells. The less-pronounced initial short-wavelength quantum efficiency variation against the biased voltage and the wide overlap of dark current—voltage (JD-V) and short-circuit current—open-circuit voltage (Jsc-Voc) characteristics prove that the double p-a-SiC:H layer structure successfully reduces recombination at the p∕iinterface. Therefore, we achieved highly stabilized efficiency of 9.0% without any backreflector.
Disciplines
Publication Date
November 3, 2005
Publisher Statement
© 2005 American Institute of Physics. Publisher's PDF uploaded here in compliance with publisher policies. Publisher's version of the record: http://dx.doi.org/10.1063/1.2126802
Citation Information
Joshua M. Pearce, Seung Yeop Myong and Koeing Su Lim. "Double Amorphous Silicon-Carbide p-Layer Structures Producing Highly Stabilized pin-Type Protocrystalline Silicon Multilayer Solar Cells" Applied Physics Letters Vol. 87 Iss. 19 (2005)
Available at: http://works.bepress.com/jmpearce/65/