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The electronic structure change with Gd doping of HfO2 on silicon
Peter Dowben Publications
  • Yaroslav B. Losovyj, Louisiana State University at Baton Rouge
  • Ihor Ketsman, University of Nebraska - Lincoln
  • Andrei Sokolov, University of Nebraska-Lincoln
  • Kirill D. Belashchenko, University of Nebraska-Lincoln
  • Peter A. Dowben, University of Nebraska-Lincoln
  • Jinke Tang, University of Wyoming
  • Zhenjun Wang, University of Wyoming, Laramie, Wyoming
Date of this Version

Published by Am Inst of Physics. J. Appl. Phys. 91, 132908 2007. Copyright 2007. Permission to use.

Gd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite (cubic) phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p -type behavior with increasing doping level.
Citation Information
Yaroslav B. Losovyj, Ihor Ketsman, Andrei Sokolov, Kirill D. Belashchenko, et al.. "The electronic structure change with Gd doping of HfO2 on silicon" (2007)
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