The electronic structure change with Gd doping of HfO2 on siliconPeter Dowben Publications
Date of this Version9-26-2007
AbstractGd-doped HfO2 films deposited on silicon substrates undergo a crystallographic change from monoclinic to fluorite (cubic) phase with increasing Gd concentrations. The crystallographic phase change is accompanied by a small increase in the valence bandwidth and in the apparent band offset in the surface region. Electrical measurements show pronounced rectification properties for lightly doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p -type behavior with increasing doping level.
Citation InformationYaroslav B. Losovyj, Ihor Ketsman, Andrei Sokolov, Kirill D. Belashchenko, et al.. "The electronic structure change with Gd doping of HfO2 on silicon" (2007)
Available at: http://works.bepress.com/jinke_tang/8/