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Article
Ce-doped EuO: Magnetic properties and the indirect band gap
Kirill Belashchenko Publications
  • Pan Liu, University of Wyoming
  • Jinke Tang, University of Wyoming
  • Juan A. Colon Santana, University of Nebraska-Lincoln
  • Kirill D. Belashchenko, University of Nebraska-Lincoln
  • Peter A. Dowben, University of Nebraska-Lincoln
Date of this Version
1-1-2011
Document Type
Article
Citation

JOURNAL OF APPLIED PHYSICS 109, 07C311 (2011); doi:10.1063/1.3544478

Comments

Copyright 2011 American Institute of Physics. Used by permission.

Abstract
We have prepared and investigated thin films of EuO doped with the rare-earth element cerium. X-ray diffraction, scanning electron microscopy, and energy dispersive x-ray spectroscopy were used to determine the quality of these films prepared by pulsed laser deposition. Ce doping leads to an enhanced Curie temperature near 150 K, close to that seen for oxygen-deficient EuO1-x. However, the magnetization of Ce-doped EuO exhibits differences from that observed for Gd-doped and oxygen-deficient samples. The high-resolution angular-resolved photoemission from Ce-doped EuO reveals filling of conduction-band states near the X point. This indicates that the band gap in EuO is indirect, and that at 2% doping Ce-doped EuO1-x is at least semimetallic.
Citation Information
Pan Liu, Jinke Tang, Juan A. Colon Santana, Kirill D. Belashchenko, et al.. "Ce-doped EuO: Magnetic properties and the indirect band gap" (2011)
Available at: http://works.bepress.com/jinke_tang/1/