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High Power Diode-Side-Pumped 1 112-nm Nd:YAG Laser Based on Master-Oscillator Power-Amplifier System
Chinese Optics Letters
  • Biaolong Liu, Chinese Academy of Sciences
  • Zhichao Wang, Chinese Academy of Sciences
  • Feng Yang, Chinese Academy of Sciences
  • Zhimin Wang, Chinese Academy of Sciences
  • Yong Bo, Chinese Academy of Sciences
  • Hongtao Yuan, Chinese Academy of Sciences
  • Lei Yuan, Chinese Academy of Sciences
  • Baoshan Wang, Chinese Academy of Sciences
  • Jialin Xu, Chinese Academy of Sciences
  • Yading Guo, Chinese Academy of Sciences
  • Qinjun Peng, Chinese Academy of Sciences
  • Jing-yuan Zhang, Georgia Southern University
  • Dafu Cui, Chinese Academy of Sciences
  • Zuyan Xu, Chinese Academy of Sciences
Document Type
Article
Publication Date
1-1-2014
Disciplines
Abstract
We demonstrate a high power high beam quality diode-pumped 1 112-nm Nd:YAG master-oscillator poweramplifier (MOPA) laser system. To increase the extraction efficiency and output power, a four-pass amplifier scheme is employed. Finally, the injected laser output power is amplified from 26 to 64 W with beam quality factor M2=2.85. Furthermore, a theoretical model that takes the temporal overlap inversion number dynamics into account is employed to analyze the performance of the MOPA laser system, and a good agreement with the experimental data is obtained.
Citation Information
Biaolong Liu, Zhichao Wang, Feng Yang, Zhimin Wang, et al.. "High Power Diode-Side-Pumped 1 112-nm Nd:YAG Laser Based on Master-Oscillator Power-Amplifier System" Chinese Optics Letters Vol. 12 Iss. 3 (2014)
Available at: http://works.bepress.com/jing-yuan_zhang/26/