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High-Power 880-nm Diode-Directly-Pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 nm with a Semiconductor Saturable Absorber Mirror
Optics Letters
  • Fang-Qin Li, Chinese Academy of Sciences
  • Ke Liu, Chinese Academy of Sciences
  • Lin Han, Chinese Academy of Sciences
  • Nan Zong, Chinese Academy of Sciences
  • Yong Bo, Chinese Academy of Sciences
  • Jing-Yuan Zhang, Georgia Southern University
  • Qin-Jun Peng, Chinese Academy of Sciences
  • Da-Fu Cui, Chinese Academy of Sciences
  • Zu-Yan Xu, Chinese Academy of Sciences
Document Type
Article
Publication Date
1-1-2011
DOI
10.1364/OL.36.001485
Disciplines
Abstract
A high-power 880-nm diode-directly-pumped passively mode-locked 1342 nm Nd:YVO4laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). The laser mode radii in the laser crystal and on the SESAM were optimized carefully using the ABCD matrix formalism. An average output power of 2.3 W was obtained with a repetition rate of 76 MHz and a pulse width of 29.2 ps under an absorbed pump power of 12.1 W, corresponding to an optical-optical efficiency of 19.0% and a slope efficiency of 23.9%, respectively.
Citation Information
Fang-Qin Li, Ke Liu, Lin Han, Nan Zong, et al.. "High-Power 880-nm Diode-Directly-Pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 nm with a Semiconductor Saturable Absorber Mirror" Optics Letters Vol. 36 Iss. 8 (2011) p. 1485 - 1487
Available at: http://works.bepress.com/jing-yuan_zhang/22/