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Contribution to Book
Gated Silicon Field Emitter Array Characterization
2020 IEEE 21st International Conference on Vacuum Electronics (IVEC)
  • Ranajoy Bhattacharya, Boise State University
  • Nedeljko Karaulac, Massachusetts Institute of Technology
  • Winston Chem, Massachusetts Institute of Technology
  • Akintunde I. Akinwande, Massachusetts Institute of Technology
  • Jim Browning, Boise State University
Document Type
Conference Proceeding
Publication Date
1-1-2020
Abstract

Arrays of silicon (Si) field emitter tips are being studied for use as electron source for vacuum nano-transistors. These arrays are analyzed using the CST particle tracking solver and via experiment. Simulations are used to study the potential transfer characteristics and performance for use as transistors for the vertical emitter structures. An experimental system has been developed to test the arrays under high temperature (400° C) and for various gases to study the noise characteristics and the effects of adsorption and desorption on performance.

Citation Information
Ranajoy Bhattacharya, Nedeljko Karaulac, Winston Chem, Akintunde I. Akinwande, et al.. "Gated Silicon Field Emitter Array Characterization" 2020 IEEE 21st International Conference on Vacuum Electronics (IVEC) (2020)
Available at: http://works.bepress.com/jim_browning/60/