Article
Radiation-hardened microelectronics for accelerators
IEEE Transactions on Nuclear Science
(1988)
Abstract
Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.
Disciplines
Publication Date
February, 1988
DOI
10.1109/23.12697
Publisher Statement
ⓒ 1988 IEEE
Citation Information
Jim Gover. "Radiation-hardened microelectronics for accelerators" IEEE Transactions on Nuclear Science Vol. 35 Iss. 1 (1988) p. 160 - 165 Available at: http://works.bepress.com/jim-gover/7/