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Selected Works of Jianhua Yang
Article
Engineering Nonlinearity into Memristors for Passive Crossbar Applications
Applied Physics Letters (2012)
  • Jianhua Yang, University of Massachusetts - Amherst
  • M Zhang
  • Matthew Pickett
  • Stanley Williams
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Abstract
Although TaOx memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO2-x/TaOx oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device.
Keywords
  • passive crossbar applications,
  • memristors
Disciplines
Publication Date
March, 2012
DOI
10.1063/1.3693392
Citation Information
Jianhua Yang, M Zhang, Matthew Pickett and Stanley Williams. "Engineering Nonlinearity into Memristors for Passive Crossbar Applications" Applied Physics Letters Vol. 100 Iss. 11 (2012)
Available at: http://works.bepress.com/jianhua-yang/7/