Article
Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
Advanced Materials
(2010)
Abstract
Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 °C for 1 hour.
Keywords
- diffusioin,
- nanoscale,
- memristive switching
Disciplines
Publication Date
Summer July 30, 2010
DOI
10.1002/adma.201000663
Citation Information
Jianhua Yang, John Strachan, Qiangfei Xia, Douglas Ohlberg, et al.. "Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching" Advanced Materials Vol. 22 Iss. 36 (2010) p. 4034 - 4038 Available at: http://works.bepress.com/jianhua-yang/5/