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Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping
Xiao Cheng Zeng Publications
  • Binghai Yan, Tsinghua University, Beijing 100084, People’s Republic of China
  • Xiao Cheng Zeng, University of Nebraska-Lincoln
  • Jian Wu, Tsinghua University, Beijing 100084, People’s Republic of China
  • Bing-Lin Gu, Tsinghua University, Beijing 100084, People’s Republic of China
  • Wenghui Duan, Tsinghua University, Beijing 100084, People’s Republic of China
Date of this Version
9-4-2007
Disciplines
Comments
Published by American Institute of Physics. Appl. Phys. Lett. 91, 103107 2007. © 2007 American Institute of Physics. Permission to use. http://apl.aip.org/.
Abstract

First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective p/n doping in the thinner side of the tube wall in the spirit of modulation doping.

Citation Information
Binghai Yan, Xiao Cheng Zeng, Jian Wu, Bing-Lin Gu, et al.. "Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping" (2007)
Available at: http://works.bepress.com/jian_wu/15/