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Phase Transition and Compressibility in Silicon Nanowires
Nano Letters (2008)
  • Yuejian Wang, Los Alamos National Laboratory
  • Jianzhong Zhang, Los Alamos National Laboratory
  • Ji Wu, Georgia Southern University
  • Jeffrey L. Coffer, Texas Christian University
  • Zhijun Lin, Los Alamos National Laboratory
  • Stanislav V. Sinogeikin, Carnegie Institution of Washington
  • Wenge Yang, Carnegie Institution of Washington
  • Yusheng Zhao, Los Alamos National Laboratory

Silicon nanowires (Si NWs), one-dimensional single crystalline, have recently drawn extensive attention, thanks to their robust applications in electrical and optical devices as well as in the strengthening of diamond/SiC superhard composites. Here, we conducted high-pressure synchrotron diffraction experiments in a diamond anvil cell to study phase transitions and compressibility of Si NWs. Our results revealed that the onset pressure for the Si I−II transformation in Si NWs is approximately 2.0 GPa lower than previously determined values for bulk Si, a trend that is consistent with the analysis of misfit in strain energy. The bulk modulus of Si−I NWs derived from the pressure−volume measurements is 123 GPa, which is comparable to that of Si−V NWs but 25% larger than the reported values for bulk silicon. The reduced compressibility in Si NWs indicates that the unique wire-like structure in nanoscale plays vital roles in the elastic behavior of condensed matter.

  • Silicon nanowires,
  • Crystalline
Publication Date
Citation Information
Yuejian Wang, Jianzhong Zhang, Ji Wu, Jeffrey L. Coffer, et al.. "Phase Transition and Compressibility in Silicon Nanowires" Nano Letters Vol. 20 Iss. 8 (2008)
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