Below Band Gap Photoreflectance Transitions in Epitaxial GaNApplied Physics Letters
AbstractA photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.
Citation InformationPhil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, et al.. "Below Band Gap Photoreflectance Transitions in Epitaxial GaN" Applied Physics Letters Vol. 85 Iss. 11 (2004) p. 1931 - 1933 ISSN: 0003-6951
Available at: http://works.bepress.com/jerry_clark/3/