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Below Band Gap Photoreflectance Transitions in Epitaxial GaN
Applied Physics Letters
  • Phil W. Yu
  • Jerry D. Clark, Wright State University - Main Campus
  • David C. Look, Wright State University - Main Campus
  • C. Q. Chen
  • Jinwei Yang
  • Edmundas Koutstis
  • M. Asif Khan
  • Denis V. Tsvertkov
  • Vladimir A. Dmitriev
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A photoreflectance (PR) and photoluminescence (PL) study has been performed on a Si-doped epitaxial GaN layer that contains impurity or defect related below band gap features in its PR spectrum. In the 300 K PR spectrum, these features appear at energies of 3.26 and 3.33 eV, respectively, but below 180 K they can no longer be seen. The 3.26 eV line evidently corresponds to a donor acceptor pair transition, also seen in PL. The origin of the 3.33 eV line is uncertain, but may correspond to a transition involving the nitrogen vacancy.

Copyright © 2004, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 85.11, and may be found at

Citation Information
Phil W. Yu, Jerry D. Clark, David C. Look, C. Q. Chen, et al.. "Below Band Gap Photoreflectance Transitions in Epitaxial GaN" Applied Physics Letters Vol. 85 Iss. 11 (2004) p. 1931 - 1933 ISSN: 0003-6951
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