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Contribution to Book
Characteriation of Bulk, Polycrystalline Indium Nitride Grown of Subatmospheric Pressures
Nitride Semiconductors (1998)
  • Jeffrey S. Dyck, John Carroll University
  • Kathleen Kash
  • Kwieseon Kim
  • Walter R.L. Lambrecht
  • Cliff C. Hayman
  • Alberto Argoitia
  • Michael T. Grossner
  • Willie Zhou
  • John C. Angus

Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron microscopy, and Raman spectroscopy. Lattice parameter and Raman active phonon modes are reported and compared with calculations based on the full-potential linear muffin-tin orbital method (FP-LMTO).

Publication Date
F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, S. Strite
Materials Research Society
Materials Research Society symposium proceedings
Citation Information
Jeffrey S. Dyck, Kathleen Kash, Kwieseon Kim, Walter R.L. Lambrecht, et al.. "Characteriation of Bulk, Polycrystalline Indium Nitride Grown of Subatmospheric Pressures" WarrendaleNitride Semiconductors Vol. 482 (1998)
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